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| TDE1897C TDE1898C 0.5A HIGH-SIDE DRIVER INDUSTRIAL INTELLIGENT POWER SWITCH PRELIMINARY DATA 0.5A OUTPUT CURRENT 18V TO 35V SUPPLY VOLTAGE RANGE INTERNAL CURRENT LIMITING THERMAL SHUTDOWN OPEN GROUND PROTECTION INTERNAL NEGATIVE VOLTAGE CLAMPING TO VS - 45V FOR FAST DEMAGNETIZATION DIFFERENTIAL INPUTS WITH LARGE COMMON MODE RANGE AND THRESHOLD HYSTERESIS UNDERVOLTAGE LOCKOUT WITH HYSTERESIS OPEN LOAD DETECTION TWO DIAGNOSTIC OUTPUTS OUTPUT STATUS LED DRIVER DESCRIPTION The TDE1897C/TDE1898C is a monolithic Intelligent Power Switch in Multipower BCD TechnolBLOCK DIAGRAM MULTIPOWER BCD TECHNOLOGY Minidip SIP9 ORDERING NUMBERS: SO20 TDE1897CDP TDE1898CDP TDE1898CSP TDE1897CFP TDE1898CFP ogy, for driving inductive or resistive loads. An internal Clamping Diode enables the fast demagnetization of inductive loads. Diagnostic for CPU feedback and extensive use of electrical protections make this device inherently indistructible and suitable for general purpose industrial applications. October 1995 1/12 TDE1897C - TDE1898C PIN CONNECTIONS (Top view) Minidip SO20 SIP9 ABSOLUTE MAXIMUM RATINGS (Minidip pin reference) Symbol VS VS - VO Vi Vi Ii IO El Ptot Top Tstg Parameter Supply Voltage (Pins 3 - 1) (TW < 10ms) Supply to Output Differential Voltage. See also VCl 3-2 (Pins 3 - 2) Input Voltage (Pins 7/8) Differential Input Voltage (Pins 7 - 8) Input Current (Pins 7/8) Output Current (Pins 2 - 1). See also ISC Energy from Inductive Load (TJ = 85C) Power Dissipation. See also THERMAL CHARACTERISTICS. Operating Temperature Range (T amb) Storage Temperature Value 50 internally limited -10 to VS +10 43 20 internally limited 200 internally limited -25 to +85 -55 to 150 Unit V V V V mA A mJ W C C THERMAL DATA Symbol R th j-case R th j-amb Description Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. 100 Minidip Sip 10 70 90 SO20 Unit C/W C/W 2/12 TDE1897C - TDE1898C ELECTRICAL CHARACTERISTICS (VS = 24V; T amb = -25 to +85C, unless otherwise specified) Symbol Vsmin 3 Vs 3 Iq 3 Vsth1 Vsth2 3 Vshys Isc Vdon 3-2 Ioslk 2 Vol 2 Vcl 3-2 Iold 2 Vid 7-8 Iib 7-8 Vith 7-8 Viths 7-8 Rid 7-8 Iilk 7-8 Parameter Supply Voltage for Valid Diagnostics Supply Voltage (operative) Quiescent Current Iout = Ios = 0 Undervoltage Threshold 1 Undervoltage Threshold 2 Supply Voltage Hysteresis Short Circuit Current Output Voltage Drop Output Leakage Current Low State Out Voltage Internal Voltage Clamp (VS - VO) Open Load Detection Current Common Mode Input Voltage Range (Operative) Input Bias Current Input Threshold Voltage Input Threshold Hysteresis Voltage Diff. Input Resistance Input Offset Current Vil Vih (See fig. 1); Tamb = 0 to +85C (See fig. 1); Tamb = 0 to +85C (See fig. 1); Tamb = 0 to +85C VS = 18 to 35V; RL = 1 @ Iout = 625mA; Tj = 25C @ Iout = 625mA; Tj = 125C @ Vi = Vil , Vo = 0V @ Vi = Vil; RL = @ IO = -500mA Vi = Vih; Tamb = 0 to +85C VS = 18 to 35V, VS = Vid 7-8 < 37V Vi = -7 to 15V; -In = 0V V+In > V-In V+In > V-In @ 0 < +In < +16V; -In = 0V @ -7 < +In < 0V; -In = 0V V+In = V-In 0V < Vi <5.5V -In = GND 0V < V+In <5.5V +In = GND 0V < V-In <5.5V Voth1 2 Voth2 2 Vohys 2 Iosd 4 Vosd 3-4 Ioslk 4 Vdgl 5/6 Idglk 5/6 Vfdg 5/6-3 Output Status Threshold 1 Voltage Output Status Threshold 2 Voltage Output Status Threshold Hysteresis Output Status Source Current Active Output Status Driver Drop Voltage Output Status Driver Leakage Current Diagnostic Drop Voltage Diagnostic Leakage Current Clamping Diodes at the Diagnostic Outputs. Voltage Drop to VS (See fig. 1) (See fig. 1) (See fig. 1) Vout > Voth1, Vos = 2.5V Vs - Vos @ Ios = 2mA; Tamb = -25 to 85C Vout < Voth2 , Vos = 0V VS = 18 to 35V D1 / D2 = L @ Idiag = 0.5mA D1 / D2 = L @ Idiag = 3mA D1 / D2 =H @ 0 < Vdg < Vs VS = 15.6 to 35V @ Idiag = 5mA; D1 / D2 = H 9 0.3 2 0.7 2 4 5 25 250 1.5 25 2 +Ii -Ii +Ii -Ii +Ii -Ii -20 -75 -250 -100 -50 45 1 -7 -700 0.8 50 400 150 +20 -25 +10 -125 -30 -15 12 +50 1.4 0.8 0.4 0.75 250 400 1 11 15.5 3 1.5 425 600 300 1.5 55 6 15 700 2 400 Test Condition Idiag > 0.5mA @ Vdg1 = 1.5V Min. 9 18 24 2.5 4.5 Typ. Max. 35 35 4 7.5 Unit V V mA mA V V V A mV mV A V V mA V A V mV K K A A A A A A V V V mA V A mV V A V Note Vil < 0.8V, Vih > 2V @ (V+In > V-In); All test not dissipative. Minidip pin reference. 3/12 TDE1897C - TDE1898C SOURCE DRAIN NDMOS DIODE Symbol Vfsd 2-3 Ifp 2-3 trr 2-3 tfr 2-3 Parameter Forward On Voltage Forward Peak Current Reverse Recovery Time Forward Recovery Time Test Condition @ Ifsd = 625mA t = 10ms; d = 20% If = 625mA di/dt = 25A/s 200 50 Min. Typ. 1 Max. 1.5 2 Unit V A ns ns THERMAL CHARACTERISTICS (*) Lim TH Junction Temp. Protect. Thermal Hysteresis 135 150 30 C C SWITCHING CHARACTERISTICS (VS = 24V; RL = 48) (*) ton toff td Turn on Delay Time Turn off Delay Time Input Switching to Diagnostic Valid (*) Not tested. 100 20 100 s s s Note Vil < 0.8V, Vih > 2V @ (V+In > V-In); Minidip pin reference. Figure 1 DIAGNOSTIC TRUTH TABLE Diagnostic Conditions Normal Operation Open Load Condition (Io < Iold) Short to VS Short Circuit to Ground (IO = ISC) (**) TDE1897C TDE1898C Output DMOS Open Overtemperature Supply Undervoltage (VS < Vsth1 in the falling phase of the supply voltage; VS < Vsth2 in the rising phase of the supply voltage) Input L H L H L H H H L H L H L H Output L H L H H H 4/12 TDE1897C - TDE1898C APPLICATION INFORMATION DEMAGNETIZATION OF INDUCTIVE LOADS An internal zener diode, limiting the voltage across the Power MOS to between 45 and 55V (Vcl), provides safe and fast demagnetization of inductive loads without external clamping devices. The maximum energy that can be absorbed from an inductive load is specified as 200mJ (at Tj = 85C). To define the maximum switching frequency three points have to be considered: 1) The total power dissipation is the sum of the On State Power and of the Demagnetization Energy multiplied by the frequency. 2) The total energy W dissipated in the device during a demagnetization cycle (figg. 2, 3) is: W = Vcl Figure 3: Demagnetization Cycle Waveforms Where: Vcl = clamp voltage; L = inductive load; RL = resistive load; Vs = supply voltage; IO = ILOAD 3) In normal conditions the operating Junction temperature should remain below 125C. Vcl - Vs Vs L Io - log 1 + RL RL Vcl - Vs Figure 2: Inductive Load Equivalent Circuit Figure 4: Normalized RDSON vs. Junction Temperature D93IN018 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -25 0 25 50 75 100 125 Tj (C) = RDSON (Tj) RDSON (Tj=25C) 5/12 TDE1897C - TDE1898C WORST CONDITION POWER DISSIPATION IN THE ON-STATE In IPS applications the maximum average power dissipation occurs when the device stays for a long time in the ON state. In such a situation the internal temperature depends on delivered current (and related power), thermal characteristics of the package and ambient temperature. At ambient temperature close to upper limit (+85C) and in the worst operating conditions, it is possible that the chip temperature could increase so much to make the thermal shutdown procedure untimely intervene. Our aim is to find the maximum current the IPS can withstand in the ON state without thermal shutdown intervention, related to ambient temperature. To this end, we should consider the following points: 1) The ON resistance RDSON of the output NDMOS (the real switch) of the device increases with its temperature. Experimental results show that silicon resistivity increases with temperature at a constant rate, rising of 60% from 25C to 125C. The relationship between RDSON and temperature is therefore: R DSON = R DSON0 ( 1 + k ) ( T j 25 ) where: Tj is the silicon temperature in C RDSON0 is RDSON at Tj=25C k is the constant rate (k = 4.711 10 3) (see fig. 4). 2) In the ON state the power dissipated in the device is due to three contributes: the third element are constant, while the first one increases with temperature because RDSON increases as well. 3) The chip temperature must not exceed Lim in order do not lose the control of the device. The heat dissipation path is represented by the thermal resistance of the system deviceboard-ambient (Rth). In steady state conditions, this parameter relates the power dissipated Pon to the silicon temperature Tj and the ambient temperature Tamb: T j T amb = P on R th (2) From this relationship, the maximum power Pon which can be dissipated without exceeding Lim at a given ambient temperature Tamb is: P on = Lim T amb R th Replacing the expression (1) in this equation and solving for Iout, we can find the maximum current versus ambient temperature relationship: I outx = Lim T amb R th P q P os R DSONx a) power lost in the switch: P out = I out 2 R DSON (Iout is the output current); b) power due to quiescent current in the ON state Iq, sunk by the device in addition to Iout: P q = I q V s (Vs is the supply voltage); c) an external LED could be used to visualize the switch state (OUTPUT STATUS pin). Such a LED is driven by an internal current source (delivering Ios) and therefore, if Vos is the voltage drop across the LED, the dissipated power is: P os = I os ( V s V os ). Thus the total ON state power consumption is given by: P on = P out + P q + P os (1) where RDSONx is RDSON at Tj=Lim. Of course, Ioutx values are top limited by the maximum operative current Ioutx (500mA nominal). From the expression (2) we can also find the maximum ambient temperature T amb at which a given power Pon can be dissipated: T amb = Lim P on R th = = Lim ( I out 2 R DSONx + P q + P os ) R th In particular, this relation is useful to find the maximum ambient temperature Tambx at which Ioutx can be delivered: T ambx = Lim ( I outx 2 R DSONx + + P q + P os ) R th (4) Referring to application circuit in fig. 5, let us consider the worst case: - The supply voltage is at maximum value of industrial bus (30V instead of the 24V nominal value). This means also that I outx rises of 25% In the right side of equation 1, the second and 6/12 TDE1897C - TDE1898C (625mA instead of 500mA). - All electrical parameters of the device, concerning the calculation, are at maximum values. - Thermal shutdown threshold is at minimum value. - No heat sink nor air circulation (Rth equal to Rthj-amb). Therefore: Vs = 30V, RDSON0 = 0.6, Iq = 6mA, Ios = 4mA @ Vos = 2.5V, Lim = 135C Rthj-amb = 100C/W (Minidip); 90C/W (SO20); 70C/W (SIP9) It follows: Ioutx = 0.625mA, RDSONx = 1.006, Pq = 180mW, Pos = 110mW From equation 4, we can find: T ambx = 66.7C (Minidip); 73.5C (SO20); 87.2C (SIP9). Therefore, the IPS TDE1897/1898, although guaranteed to operate up to 85C ambient temperature, if used in the worst conditions, can meet some limitations. SIP9 package, which has the lowest Rthj-amb, can work at maximum operative current over the entire ambient temperature range in the worst conditions too. For other packages, it is necessary to consider some reductions. With the aid of equation 3, we can draw a derating curve giving the maximum current allowable versus ambient temperature. The diagrams, computed using parameter values above given, are depicted in figg. 6 to 8. If an increase of the operating area is needed, heat dissipation must be improved (Rth reduced) e.g. by means of air cooling. Figure 5: Application Circuit. DC BUS 24V +/-25% +Vs +IN -IN + - CONTROL LOGIC OUTPUT P POLLING D1 D2 Ios LOAD GND OUTPUT STATUS D93IN014 7/12 TDE1897C - TDE1898C Figure 6: Max. Output Current vs. Ambient Temperature (Minidip Package, Rth j-amb = 100C/W) D93IN015 Figure 7: Max. Output Current vs. Ambient Temperature (SO20 Package, Rth j-amb = 90C/W) D93IN016 (mA) 600 500 400 300 200 100 0 0 20 40 60 80 100 (C) (mA) 600 500 400 300 200 100 0 0 20 40 60 80 100 (C) Figure 8: Max. Output Current vs. Ambient Temperature (SIP9 Package, Rth j-amb = 70C/W) D93IN017 (mA) 600 500 400 300 200 100 0 0 20 40 60 80 100 (C) 8/12 TDE1897C - TDE1898C MINIDIP PACKAGE MECHANICAL DATA DIM Min. A a1 B b b1 D E e e3 e4 F i L Z 3.18 7.95 2.54 7.62 7.62 6.6 5.08 3.81 1.52 0.125 0.51 1.15 0.356 0.204 1.65 0.55 0.304 10.92 9.75 0.313 0.100 0.300 0.300 0260 0.200 0.150 0.060 mm Typ. 3.32 0.020 0.045 0.014 0.008 0.065 0.022 0.012 0.430 0.384 Max. Min. inch Typ. 0.131 Max. 9/12 TDE1897C - TDE1898C SIP9 PACKAGE MECHANICAL DATA DIM. A a1 B B3 b1 b3 C c1 c2 D d1 e e3 L L1 L2 L3 L4 M N P 17.4 3.2 1 0.15 0.85 3.3 0.43 1.32 21.2 14.5 2.54 20.32 3.1 3 17.6 0.25 17.85 0.685 0.126 0.039 0.006 0.122 0.118 0.693 0.010 0,702 0.571 0.100 0.800 mm MIN. 2.7 TYP. MAX. 7.1 3 23 24.8 0.5 1.6 0.033 0.130 0.017 0.052 0.835 0.020 0.063 MIN. 0.106 inch TYP. MAX. 0.280 0.118 0.90 0.976 D L3 c2 C L1 N P M d1 L4 L2 a1 1 9 L b1 b3 e3 B B3 SIP9 e A c1 10/12 TDE1897C - TDE1898C SO20 PACKAGE MECHANICAL DATA DIM. MIN. A a1 a2 b b1 C c1 D E e e3 F L M S 7.4 0.5 12.6 10 1.27 11.43 7.6 1.27 0.75 8 (max.) 0.291 0.020 13.0 10.65 0.35 0.23 0.5 45 (typ.) 0.496 0.394 0.050 0.450 0.300 0.050 0.030 0.510 0.419 0.1 mm TYP. MAX. 2.65 0.2 2.45 0.49 0.32 0.014 0.009 0.020 0.004 MIN. inch TYP. MAX. 0.104 0.008 0.096 0.019 0.013 11/12 TDE1897C - TDE1898C Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGSTHOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. (c) 1995 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 12/12 |
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